Semiconductor device and method for manufacturing the same

ABSTRACT

A semiconductor device includes a first active area of a first type, a second active area of a second type, and a plurality of gates. The gates are arranged above and across the first active area and the second active area. At a first side of a first gate of the plurality of gates, a first region of the first active area is configured to receive a first voltage and a first region of the second active area is configured to receive a second voltage. At a second side of the first gate, a second region of the first active area is disconnected from the first voltage and a second region of the second active area is disconnected from the second voltage.

BACKGROUND

Latchup is a phenomenon of parasitic SCR paths triggered by internal orexternal noise in a CMOS circuit, which causes malfunction or electricalfailure. Meanwhile, single event latchup caused by particle striking orelectromagnetic radiation prevents the CMOS circuit from applications ofaerospace, outer space, server and automobile, etc.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a diagram of a semiconductor device, in accordance withvarious embodiments.

FIG. 2 is a cross-sectional view of the semiconductor device in FIG. 1,in accordance with various embodiments.

FIG. 3 is an equivalent circuit of the semiconductor device in FIG. 1,in accordance with various embodiments.

FIG. 4 is a flow chart of a method for fabricating the semiconductordevice in FIG. 1, in accordance with various embodiments.

FIG. 5 is a diagram of a semiconductor device, in accordance withvarious embodiments.

FIG. 6 is an equivalent circuit of the semiconductor device in FIG. 5,in accordance with various embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Reference is now made to FIG. 1. FIG. 1 is a diagram of a semiconductordevice 100, in accordance with various embodiments. As illustrated inFIG. 1, the semiconductor device 100 includes a first active area 110 ofa first type, a second active area 120 of a second type, and a pluralityof gates 131˜139. The gates 131˜139 are arranged above and across thefirst active area 110 and the second active area 120. In variousembodiments, the first type is a P-type and the second type is anN-type. However, the scope of the disclosure is not intended to belimited in the above-mentioned types, and other suitable arrangement oftypes of the first type and the second type are within the contemplatedscope of the present disclosure.

As illustrated in FIG. 1, a first region 111 of the first active area110 and a first region 121 of the second active area 120 are disposed ata first side of a first gate 131 of the plurality of gates 131˜139. Asecond region 112 of the first active area 110 and a second region 122of the second active area 120 are disposed at a second side of the firstgate 131. Explain in a different way, the first region 111 of the firstactive area 110 and the first region 121 of the second active area 120are disposed at the left side of the first gate 131 of the plurality ofgates 131˜139. The second region 112 of the first active area 110 andthe second region 122 of the second active area 120 are disposed at theright side of the first gate 131.

In various embodiments, the first region 111 and the third region 113 ofthe first active area 110 are coupled to a metal contact 152, and thefirst region 121 and the third region 123 of the second active area 120are coupled to a metal contact 154.

In some embodiments, there are fourth region 114, fifth region 115,sixth region 116, and seventh region 117 of the first active area 110and fourth region 124, fifth region 125, sixth region 126, and seventhregion 127 of the second active area 120 in FIG. 1. The pattern is thatthe first regions 111, 121, the third regions 113, 123, and the fifthregions 115, 125 are coupled to the metal contact 152 or the metalcontact 154, and the second regions 112, 122, the fourth regions 114,124 are not coupled to the metal contact 152 or the metal contact 154.However, the scope of the disclosure is not intended to be limited inthe above-mentioned configuration. As illustrated in FIG. 1, there aresixth regions 116, 126 and seventh regions 117, 127 that are not coupledto the metal contact 152 or the metal contact 154, and other suitableconfiguration are within the contemplated scope of the presentdisclosure. In various embodiments, the regions that are not coupled tothe metal contact 152 or the metal contact 154 are configured asfillers.

In some embodiments, a region 162 and a region 164 are configured asbody. The region 162 is coupled to the metal contact 152, and the region164 is coupled to the metal contact 154. In various embodiments, theregion 162 is the second type, and the region 164 is the first type.

Reference is now made to FIG. 2. FIG. 2 is a cross-sectional view of thesemiconductor device in FIG. 1, in accordance with various embodiments.It is noted that the cross-sectional view of the semiconductor device100 in FIG. 2 is for explanation purpose for understanding the SCRcircuits 142, 144, 146 in the semiconductor device 100, and it is notillustrated by actual cross-sectional structure of FIG. 1, which isdescribed in detailed as below.

As illustrated in the left side of FIG. 2, it is a cross-sectional viewof the semiconductor device 100 across line AA′ in FIG. 1. It is notedthat the direction of the line AA′ in FIG. 1 is from the left side tothe right side. The semiconductor device 100 further includes asubstrate 170, and a first well 180 of the second type. The first well180 of the second type is formed on the substrate 170. The first region111 and the second region 112 of the first active area 110 are formed inthe first well 180. The gate 131 is formed on the first well 180. Thefirst region 111 of the first active area 110 is configured as a sourceregion of a transistor M1, and the second region 112 of the first activearea 110 is configured as a drain region of the transistor M1.

Reference is now made to the right side of FIG. 2. It is across-sectional view of the semiconductor device 100 across line BB′ inFIG. 1. It is noted that the direction of the line BB′ in FIG. 1 is fromthe right side to the left side, which is opposite to the direction ofthe line AA′. The semiconductor device 100 further includes a secondwell 190 of the first type. The second well 190 of the first type isformed on the substrate 170. The first region 121 and the second region122 of the second active area 120 are formed in the second well 190. Thegate 131 is formed on the second well 190. The first region 121 of thesecond active area 120 is configured as a source region of a transistorM2, and the second region 122 of the second active area 120 isconfigured as a drain region of the transistor M2.

In various embodiments, the first region 111 of the first active area110, the first well 180, the second well 190, and the first region 121of the second active area 120 are configured to operate as theequivalent SCR circuit 142. In some embodiments, the equivalent SCRcircuit 142 is formed by a transistor T1 and a transistor T2. Theemitter of the transistor T1 is coupled to the first region 111 of thefirst active area 110, the base of the transistor T1 is coupled to thebody region 162 and the collector of the transistor T2, and thecollector of the transistor T1 is coupled to the base of the transistorT2. The emitter of the transistor T2 is coupled to the first region 121of the second active region 120, and the base of the transistor T2 iscoupled to the body region 164.

For further understanding the original circuit and the parasitic circuitin the semiconductor device 100, reference is now made to FIG. 3. FIG. 3is an equivalent circuit of the semiconductor device 100 in FIG. 1, inaccordance with various embodiments. As shown in FIG. 3, there arecomplementary metal oxide semiconductors (CMOS) and the equivalent SCRcircuit 142. The CMOS is composed of a metal oxide semiconductor fieldeffect transistor (MOSFET) M1 and a MOSFET M2. Reference is now made toboth FIG. 2 and FIG. 3, the first region 111 of the first active area110 is configured as a source region of the MOSFET M1, and the secondregion 112 of the first active area 110 is configured as a drain regionof the MOSFET M1. In addition, the first region 121 of the second activearea 120 is configured as a source region of the MOSFET M1, and thesecond region 122 of the second active area 120 is configured as a drainregion of the MOSFET M2. The first region 111 of the first active area110, the first well 180, the second well 190, and the first region 121of the second active area 120 in FIG. 2 are configured to operate as theequivalent SCR circuit 142 in FIG. 3.

As illustrated in FIG. 3, if noises occur in the semiconductor device100 and the base of the transistor T1 is pulled low, the transistor T1is turned on and a power source 800 provides the first voltage VDDthrough the transistor T1 to the base of the transistor T2.Subsequently, the transistor T2 is turned on due to the first voltageVDD, and a short path is therefore formed in the semiconductor device100, such that a high current leakage from the power source 800 to theground 900 occurs. However, the configuration of the semiconductordevice 100 in FIG. 1 may improve the above-mentioned phenomenon. Thefollowing description explains how to improve the above-mentionedphenomenon together with a flow chart of a method 400.

Reference is now made to FIG. 4. FIG. 4 is a flow chart of a method 400for fabricating the semiconductor device 100 in FIG. 1, in accordancewith various embodiments. For illustration, the fabricating process ofthe semiconductor device 100 in FIG. 1 is described by the method 400.

With reference to the method 400 in FIG. 4 in operation 410, the firstregion 111 of the first active area 110 is configured to receive a firstvoltage VDD. In some embodiments, referring to FIG. 1, FIG. 2 and FIG.3, the metal contact 152 is coupled to the power source as shown in FIG.3, and therefore, the first region 111 of the first active area 110 isconfigured to receive the first voltage VDD provided by the power source800 through the metal contact 152.

In operation 420, the first region 121 of the second active area 120 isconfigured to receive a second voltage VSS. In some embodiments,referring to FIG. 1, FIG. 2 and FIG. 3, the metal contact 154 is coupledto ground 900, and therefore, the first region 121 of the second activearea 120 is configured to receive the second voltage VSS introduced bythe ground 800 through the metal contact 154. In various embodiments,the first voltage VDD is a power supply voltage or a high level voltage,and the second voltage VSS is ground voltage or a low level voltage.However, the scope of the disclosure is not intended to be limited insuch kinds of the voltages, and other suitable kinds of the voltages arewithin the contemplated scope of the present disclosure.

In operation 430, the second region 112 of the first active area 110 isdisconnected from the first voltage VDD. In some embodiments, referringto FIG. 1, FIG. 2, and FIG. 3, the second region 112 of the first activearea 110 is not coupled to the metal contact 152, and therefore, thesecond region 112 of the first active area 110 is disconnected from thefirst voltage VDD provided by the power source 800.

In operation 440, the second region 122 of the second active area 120 isdisconnected from the second voltage VSS. In some embodiments, referringto FIG. 1, FIG. 2, and FIG. 3, the second region 122 of the secondactive area 120 is not coupled to the metal contact 154, and therefore,the second region 122 of the second active area 120 is disconnected fromthe second voltage VSS introduced by the ground 900.

As illustrated in FIG. 1, a second gate 132 of the plurality of gates131˜139 is disposed adjacent to the first gate 131, the second region112 of the first active area 110 and the second region 122 of the secondactive area 120 are arranged at a first side of the second gate 132, anda third region 113 of the first active area 110 and a third region 123of the second active area 120 are arranged at a second side of thesecond gate 132. Explain in a different way, the second region 112 ofthe first active area 110 and the second region 122 of the second activearea 120 are arranged at the left side of the second gate 132, and thethird region 113 of the first active area 110 and the third region 123of the second active area 120 are arranged at the right side of thesecond gate 132.

In some embodiments, the third region 113 of the first active area 110is coupled to the metal contact 152, and the third region 123 of thesecond active area 120 is coupled to the metal contact 154.

With reference to the method 400 in FIG. 4, in operation 450, the thirdregion 113 of the first active area 110 is configured to receive thefirst voltage VDD. In some embodiments, referring to FIG. 1, FIG. 2 andFIG. 3, the third region 113 of the first active area 110 is configuredto receive the first voltage VDD provided by the power source 800through the metal contact 152.

In operation 460, the third region 123 of the second active area 120 isconfigured to receive the second voltage VSS. In some embodiments,referring to FIG. 1, FIG. 2 and FIG. 3, the third region 123 of thesecond active area 120 is configured to receive the second voltage VSSintroduced by the ground 900 through the metal contact 154.

The above description of the method 400 includes exemplary operations,but the operations of the method 400 are not necessarily performed inthe order described. The order of the operations of the method 400disclosed in the present disclosure are able to be changed, or theoperations are able to be executed simultaneously or partiallysimultaneously as appropriate, in accordance with the spirit and scopeof some embodiments of the present disclosure. In addition, theoperations may be added, replaced, changed order, and/or eliminated asappropriate, in accordance with the spirit and scope of some embodimentsof the present disclosure.

In some embodiments, referring to FIG. 1, the second region 112 of thefirst active area 110 and the second region 122 of the second activearea 120 are floating. In various embodiments, the fourth region 114 ofthe first active area 110 and the fourth region 124 of the second activearea 120 are floating. In some embodiments, referring to FIG. 1, thesixth regions 116, 126 and the seventh regions 117, 127 of the firstactive area 110 and the second active area 120 are floating.

As illustrated in FIG. 1, equivalent silicon controlled rectifier (SCR)circuits 142, 144, and 146 are parasitic SCRs occurred in the regionsthat receive the first voltage VDD and the second voltage VSS. Due tothe configuration in FIG. 1, a portion of the regions receive the firstvoltage VDD and the second voltage VSS, and therefore, the number of theSCR circuits is reduced, and a high current leakage phenomenon generatedby the SCR circuits is improved as well.

Reference is now made to FIG. 5. FIG. 5 is a diagram of a semiconductordevice 100A, in accordance with various embodiments. Compared with thesemiconductor device 100 in FIG. 1, a portion of the connections of thesemiconductor device 100A in FIG. 5 is different, which is described indetailed as below. As illustrated in FIG. 5, the first region 111A ofthe first active area 110 is still configured to receive the firstvoltage VDD, the first region 121A of the second active area 120A isstill configured to receive the second voltage VSS, the second region112A of the first active area 110A is still disconnected from the firstvoltage VDD, and the second region 122A of the second active area 120Ais still disconnected from the second voltage VSS. It is noted that thesecond region 112A of the first active area 110A and the second region122A of the second active area 120A are coupled to each other. Invarious embodiments, the second region 112A of the first active area110A and the second region 122A of the second active area 120A arecoupled to each other by a metal contact 156A.

In various embodiments, when there are noises occurred in thesemiconductor device 100A in FIG. 5, the equivalent SCR circuit 142A istriggered. Meanwhile, a first type current introduced by the firstvoltage VDD and a second type current introduced by the second voltageVSS tend to flow through the metal contact 156A between the secondregion 112A of the first active area 110A and the second region 122A ofthe second active area 120A because the resistance of the metal contact156A is lower than the resistance of the equivalent SCR circuit 142A. Inview of the above, less current flows through the equivalent SCR circuit142A, and the high current leakage phenomenon happened in the equivalentSCR circuit 142A is therefore improved.

In some embodiments, as illustrated in FIG. 5, the third region 113A ofthe first active area 110A is disconnected from the first voltage VDD,and the third region 123A of the second active area 120A is disconnectedfrom the second voltage VSS. Due to the configuration in FIG. 5, part ofthe regions receive the first voltage VDD and the second voltage VSS,and therefore, the number of the SCR circuits is reduced, and the highcurrent leakage phenomenon generated by the SCR circuits is furtherimproved.

In various embodiments, the third region 113A of the first active area110A and the third region 123A of the second active area 120A arecoupled to each other. In some embodiments, the third region 113A of thefirst active area 110A and the third region 123A of the second activearea 120A are coupled to each other by a metal contact 158A. Due to suchconfiguration, the first type current introduced by the first voltageVDD and the second type current introduced by the second voltage VSStend to flow through the metal contact 156A between the second region112A and the second region 122A, and flows through the metal contact158A between the third region 113A and the third region 123A because theresistance of the metal contact 158A is lower than the resistance of theequivalent SCR circuit 142A. Therefore, less and less current flowsthrough the equivalent SCR circuit 142A, and the high current leakagephenomenon happened in the equivalent SCR circuit 142A is even moreimproved.

Furthermore, different types of the currents introduced by the firstvoltage VDD and the second voltage VSS are neutralized, which isexplained in detailed in the following description regarding FIG. 6.

Reference is now made to FIG. 6. FIG. 6 is an equivalent circuit of thesemiconductor device 100A in FIG. 5, in accordance with variousembodiments. For facilitating the understanding of FIG. 6, reference isnow made to FIG. 2, FIG. 5 and FIG. 6. The first region 111A of thefirst active area 110A, the first well 180, the second well 190, and thefirst region 121A of the second active area 120A are configured tooperate as the equivalent SCR circuit 142A. The first region 111A of thefirst active area 110A and the first region 112A of the first activearea 110A are regard as the parasitic transistor T3 of the parasiticcircuit 143A, and the first region 121A of the second active area 120Aand the second region 122A of the second active area 120A are regard asthe parasitic transistor T4 of the parasitic circuit 143A.

As can be seen in FIG. 5 and FIG. 6, when there are noises occurred inthe semiconductor device 100A and the equivalent SCR circuit 142A istriggered, the first type current introduced by the first voltage VDDoriginally flows through the path P1 and the second type currentintroduced by the second voltage VSS originally flows through the pathP2, such that a short path of the equivalent SCR circuit 142A is formedand the high leakage current flows from the power source 800 to theground 900. However, owing to the connection of the parasitictransistors T3, T4 established by the metal contact 156A, most of thefirst type current introduced by the first voltage VDD tends to flowthrough the path P3, and most of the second type current introduced bythe second voltage VSS tends to flow through the path P4 when theequivalent SCR circuit 142A is triggered by noises.

In some embodiments, the first type current is composed of holes, andthe second type current is composed of electrons. When the holes flowthrough the path P3 and the electrons flow through the path P4, theholes and the electrons neutralized at the connection of the parasitictransistors T3, T4 established by the metal contact 156A. In view of theabove, the original high leakage current generated by the equivalent SCRcircuit 142A not only tends to flow through the parasitic transistorsT3˜T4, but the neutralization occurs to reduce the high leakage current.Therefore, the high current leakage phenomenon happened in theequivalent SCR circuit 142A is even more improved.

In some embodiments, a semiconductor device is disclosed that includes afirst active area of a first type, a second active area of a secondtype, and a plurality of gates. The gates are arranged above and acrossthe first active area and the second active area. At a first side of afirst gate of the plurality of gates, a first region of the first activearea is configured to receive a first voltage and a first region of thesecond active area is configured to receive a second voltage. At asecond side of the first gate, a second region of the first active areais disconnected from the first voltage and a second region of the secondactive area is disconnected from the second voltage.

Also disclosed is a semiconductor device that includes first transistorsof a first type, and second transistors of a second type. The firsttransistors of the first type include source regions and drain regionsthat are formed on a first active area. The second transistors of asecond type is coupled to the first transistors, respectively. Thesecond transistors include source regions and drain regions that areformed on a second active area. At least one drain region of the firsttransistors is disconnected from a first voltage and is arranged betweenthe source regions of two of the first transistors that are configuredto receive the first voltage. At least one drain region, whichcorresponds to the at least one source region of the first transistors,of the second transistors, is disconnected from a second voltage and isarranged between the source regions of two of the second transistorsthat are configured to receive the second voltage.

Also disclosed is a method that includes disconnecting at least one ofdrain regions that are formed on a first active area, of firsttransistors, from a first voltage; and disconnecting at least one ofdrain regions that are formed on a second active area, of secondtransistors coupled to the first transistors, respectively, from asecond voltage, wherein the at least one of drain regions of the secondtransistors corresponds to the at least one of drain regions of thefirst transistors.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A semiconductor device, comprising: a first active area of a firsttype; a second active area of a second type; and a plurality of gateseach arranged above and across each of the first active area and thesecond active area, wherein at a first side of a first gate of theplurality of gates, a first region of the first active area isconfigured to receive a first voltage and a first region of the secondactive area is configured to receive a second voltage, and at a secondside of the first gate, a second region of the first active area isdisconnected from the first voltage and a second region of the secondactive area is disconnected from the second voltage.
 2. Thesemiconductor device of claim 1, wherein the second region of the firstactive area and the second region of the second active area arefloating.
 3. The semiconductor device of claim 1, wherein the secondregion of the first active area and the second region of the secondactive area are coupled to each other.
 4. The semiconductor device ofclaim 1, wherein a second gate of the plurality of gates is disposedadjacent to the first gate, the second region of the first active areaand the second region of the second active area are arranged at a firstside of the second gate, and a third region of the first active area anda third region of the second active area are arranged at a second sideof the second gate.
 5. The semiconductor device of claim 4, wherein thethird region of the first active area is configured to receive the firstvoltage, and the third region of the second active area is configured toreceive the second voltage.
 6. The semiconductor device of claim 4,wherein the second region of the first active area and the second regionof the second active area are coupled to each other, and the thirdregion of the first active area and the third region of the secondactive area are coupled to each other.
 7. The semiconductor device ofclaim 1, further comprising: a first well of the second type, whereinthe first region and the second region of the first active area areformed in the first well; and a second well of the first type, whereinthe first region and the second region of the second active area areformed in the second well, wherein the first region of the first activearea is configured as a source region of a first transistor, and thefirst region of the second active area is configured as a source regionof a second transistor.
 8. The semiconductor device of claim 7, whereinthe first region of the first active area, the first well, the secondwell, and the first region of the second active area are configured tooperate as an equivalent silicon controlled rectifier (SCR) circuit. 9.A semiconductor device, comprising: first transistors of a first type,comprising: gates, source regions, and drain regions that are formed ona first active area; and second transistors of a second type, coupled tothe first transistors, and sharing the gates of the first transistorswith the first transistors, the second transistors comprising: sourceregions and drain regions that are formed on a second active area,wherein at least one drain region of the first transistors isdisconnected from a first voltage and is arranged between the sourceregions of two of the first transistors that are configured to receivethe first voltage, and wherein at least one drain region, whichcorresponds to at least one source region of the second transistors, isdisconnected from a second voltage and is arranged between the sourceregions of two of the second transistors that are configured to receivethe second voltage.
 10. The semiconductor device of claim 9, wherein theat least one drain region of the first transistors and the at least onedrain region of the second transistors are floating.
 11. Thesemiconductor device of claim 9, wherein the at least one drain regionof the first transistors and the at least one drain region of the secondtransistors are coupled to each other.
 12. The semiconductor device ofclaim 9, further comprising: a first well of the second type, whereinthe first transistors are formed in the first well; and a second well ofthe first type, wherein the second transistors are formed in the secondwell, wherein the source regions of the first transistors that areconfigured to receive the first voltage, the first well, the secondwell, and the source regions of the second transistors that areconfigured to receive the second voltage are configured to operate asequivalent silicon controlled rectifier (SCR) circuits.
 13. Thesemiconductor device of claim 12, wherein a source region of one of thefirst transistors that is configured to receive the first voltage, thefirst well, and a drain region of the one of the first transistors thatis disconnected from the first voltage are configured to operate as afirst equivalent transistor, and a source region of another one of thesecond transistors that is configured to receive the second voltage, thesecond well, and a drain region of the another one of the secondtransistors that is disconnected from the second voltage are configuredto operate as a second equivalent transistor.
 14. The semiconductordevice of claim 13, wherein collectors of the first equivalenttransistor and the second equivalent transistor are coupled to eachother.
 15. The semiconductor device of claim 14, wherein bases of thefirst equivalent transistor and the second equivalent transistor areconfigured to receive the first voltage and the second voltagerespectively.
 16. The semiconductor device of claim 14, wherein a firsttype current introduced by the first voltage flows through the firstequivalent transistor, and a second type current introduced by thesecond voltage flows through the second equivalent transistor, such thatthe first type current and the second type current are neutralized atemitters of the first equivalent transistor and the second equivalenttransistor. 17-20. (canceled)
 21. A semiconductor device, comprising: afirst active area of a first type; a second active area of a secondtype; and a plurality of gates each arranged across each of the firstactive area and the second active area, wherein a first region of thefirst active area and a first region of the second active area areincluded in an equivalent silicon controlled rectifier (SCR) circuit andare configured to receive a first voltage and a second voltage that isdifferent from the first voltage, respectively; wherein a second regionof the first active area is arranged opposite to the first region of thefirst active area with respect to a first gate in the plurality ofgates, and a second region of the second active area is arrangedopposite to the first region of the second active area with respect tothe first gate, and the second region of the first active area and thesecond region of the second active area are disconnected from the firstvoltage and the second voltage, and the first region and the secondregion of the first active area are included in a first equivalenttransistor that is coupled to the equivalent SCR circuit, and the firstregion and the second region of the second active area are included in asecond equivalent transistor that is coupled to the equivalent SCRcircuit and the first equivalent transistor.
 22. The semiconductordevice of claim 21, wherein the second region of the first active areaand the second region of the second active area are coupled to eachother.
 23. The semiconductor device of claim 21, wherein a third regionof the first active area is arranged opposite to the second region ofthe first active area with respect to a second gate in the plurality ofgates, a third region of the second active area is arranged opposite tothe second region of the second active area with respect to the secondgate, and the third region of the first active area and the third regionof the second active area are disconnected from the first voltage andthe second voltage.
 24. The semiconductor device of claim 23, whereinthe third region of the first active area and the third region of thesecond active area are coupled to each other.